PART |
Description |
Maker |
CY7C1019DV33-10BVXI CY7C1019DV33-10BVXIT CY7C1019D |
1-Mbit (128 K 8) Static RAM
|
Cypress
|
CY62137EV30LL-45BVXI12 CY62137EV30LL-45ZSXI12 CY62 |
2-Mbit (128 K × 16) Static RAM
|
Cypress Semiconductor
|
CY62137FV18LL-55BVXI CY62137FV18LL-55BVXIT |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
CY62137EV30LL-45BVXI CY62137EV30LL-45BVXIT CY62137 |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
CY62128ELL-45SXAT CY62128ELL-45SXI CY62128ELL-45ZX |
1-Mbit (128 K 8) Static RAM
|
Cypress
|
CY62137FV18LL-55BVXI CY62137FV1811 |
2-Mbit (128 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
CY7C1019D-10ZSXI CY7C1019D-10VXI |
1-Mbit (128 K × 8) Static RAM CMOS for optimum speed/power
|
Cypress Semiconductor
|
UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 64K x 16 Static RAM 1K x 8 Dual-Port Static RAM 1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
|
意法半导 STMicroelectronics N.V.
|
UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
|
Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
|